Abstract
In this paper we report the results of Monte-Carlo simulations performed on double-gate ballistic MOSFETs with a geometry such that the gates overlap only a fraction of the channel. We present a qualitative analysis of the simulation results highlighting the similarities and differences between ballistic devices of 10nm and 100nm channel length, in an attempt to understand the electrostatics in a ballistic channel, especially the influence of the gate, source and drain terminals on the channel.
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