Abstract

The role of the support in tuning the properties of transition metal (TM) atoms is studied by means of density functional theory calculations. We have considered the adsorption of Cu, Ag, Au, Ni, Pd, and Pt atoms on crystalline silica bilayers, either free-standing or supported on Ru(0001) and Pt(111) metal surfaces. These systems have been compared with an hydroxylated SiO2/Si(100) film simulating the native oxide formed on a silicon wafer. The properties of the TM atoms change significantly on the various supports. While the unsupported silica bilayer weakly binds some of the TM atoms studied, the SiO2/Ru(0001) or SiO2/Pt(111) supports exhibit enhanced reactivity, sometimes resulting in a net electron transfer with the formation of charged species. Differences in the behavior of SiO2/Ru(0001) and SiO2/Pt(111) are rationalized in terms of different work functions and metal/oxide interfacial distances. No electron transfer is observed on the SiO2/Si(100) films. Here, the presence of hydroxyl groups on the surface provides relatively strong binding sites for the TM atoms that can be stabilized by the interaction with one or two OH groups. The final aspect that has been investigated is the porosity of the silica bilayer, at variance with the dense SiO2/Si(100) film. Depending on the atomic size, some TM atoms can penetrate spontaneously through the six-membered silica rings and become stabilized in the pores of the bilayer or at the SiO2/metal interface. This study shows how very different chemical properties can be obtained by depositing the same TM atom on different silica supports.

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