Abstract
Silver Indium sulfide (AgInS2) thin films are prepared using low cost spray pyrolysis technique. Influence of substrate temperature on the film growth is studied by varying the temperature from 280°C to 400°C. XRD analysis and Raman studies are carried out to determine the crystal structure of AgInS2 thin films. All the samples exhibited tetragonal structure with preferential orientation along (112) plane. The conductivity of films changed from n – type to p - type with substrate temperature greater than 280°C. The valence state information of deposited AgInS2 thin films is studied using XPS analysis.Silver Indium sulfide (AgInS2) thin films are prepared using low cost spray pyrolysis technique. Influence of substrate temperature on the film growth is studied by varying the temperature from 280°C to 400°C. XRD analysis and Raman studies are carried out to determine the crystal structure of AgInS2 thin films. All the samples exhibited tetragonal structure with preferential orientation along (112) plane. The conductivity of films changed from n – type to p - type with substrate temperature greater than 280°C. The valence state information of deposited AgInS2 thin films is studied using XPS analysis.
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