Role of Structural Parameters on the Leaky Electronic States in the Continuum of Superlattice Structures

Abstract


 
 
 We present the concept of a leaky electronic state in the continuum in a semiconductor superlattice with a structural defect. The required conditions for such unusual electronic state were investigated through self- consistent simulations. The number of quantum wells and the position of the dopants in the superlattice are essential for the creation of the leaky electronic state. The influence of these parameters was analyzed through the oscillator strength of the optical transition between the ground state and the first and second leaky electronic states in the continuum. To produce two leak electronic states in the continuum, it is necessary one asymmetric superlattice with five quantum wells on the left side of the n-doped structural defect quantum well and one quantum well on the right one, and their oscillator strengths are 0.22 and 0.05, respectively.