Abstract
Solution of the Poisson equation is analyzed in terms of the model of a completely depleted contact layer for a heterojunction having as one of its components a noncubic silicon carbide polytype that exhibits a spontaneous polarization P sp. It is shown that consideration of P sp leads to broadening of the space charge regions. It is demonstrated that an isotype p-p junction with a quantum well in the valence band of the 3C polytype at the interface with the H-SiC polytype can serve as a model object for studies of the effect exerted by the spontaneous polarization on the properties of SiC heterojunctions. The possibility of a noticeable effect of P sp on the ground-state energy of an electron in the well is demonstrated for the model with a triangular potential well.
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