Role of size on effective band gap in Silicon nano-solid

Abstract

In the present paper we have studied the size dependence effective band gap of semiconductor Silicon ( Si ) nano-solid. The band gap is one of the most significant electronic parameters of semiconductor material. The band gap of semiconductor dependents on the temperature, pressure, composition, number of atoms as well as size of the solid. When semiconductor solids are prepared in the form of nano-metric level, their small particle size gives rise to quantum confinement and the energy bands are split into discrete levels. It is found that the effective band gap decreases with increasing the size (diameter and number of atoms) of Si nano-solid. Another conclusion is that the energy band gap of semiconductor tend to decrease with increasing temperature and hence atomic vibration increases.