Abstract
The effect of singlet oxygen on the formation of nanoporous silicon in the case of photoelectrochemical etching of p-Si is studied. Pulsed electrolysis was used to discriminate between chemical and electrochemical processes. The pulsed etching of silicon was accompanied by pulsed illumination coinciding either with current pulses or with zero-current periods. An analysis of the results obtained demonstrated that, as the number of silicon nanocrystals increases under illumination, singlet oxygen starts to be generated from molecular oxygen dissolved in the electrolyte. This process leads to oxidation of the surface of silicon nanocrystallites and to a change in its passivation.
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