Abstract
Transparent and conductive undoped tin oxide (SnO x ) thin films were deposited at low substrate temperature (< 140 °C) by radio frequency (rf) plasma enhanced reactive thermal evaporation (rf-PERTE) of tin (Sn) in the presence of oxygen The undoped SnO x films were not submitted to any post-annealing treatments. The influence of rf power variation on the optical, electrical and structural properties of the as-grown films is presented. A variation in the films' structure was verified with the increase of rf power. Undoped SnO x films, 90 nm average thick, deposited at rf power range of 60–70 W are nanocrystalline, show a conductive behaviour, an average visible transmittance of ≥ 80% and a maximum electrical conductivity of about 34.6 (Ω cm) − 1 . Films deposited at lower values of rf power (40 W) are amorphous and exhibit a semiconductive behaviour, showing an electrical conductivity of about 7.54 × 10 − 1 (Ω cm) − 1 . As a low substrate temperature deposition process is used, SnO x thin films can be obtained on a wide range of substrates.
Published Version
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