Abstract

The optical and electrical properties of indium tin oxide (ITO) thin films grown on soda-lime glass substrates using a radio frequency (RF) magnetron sputtering technique were studied as a function of the sputtering RF power. Fixed 100 nm thickness of ITO films were deposited on the soda-lime glass substrates at 300 °C, using RF powers ranging between 50 to 150 W. The optical and electrical properties of the sputtered ITO films were characterized by Ultraviolet–Visible Spectroscopy (UV-Vis), Hall Effect Measurement and Atomic Force Microscope (AFM). Varying the substrate temperature and RF sputtering power affected surface roughness to decrease from 5.80, 4.59 and 3.46 nm while the resistivity also decreased from 18.73 x 10−4, 6.484 x 10−4 and 2.421 x 10−4 Ω.cm. Deposition of ITO thin films on soda-lime glass substrates by RF magnetron sputtering at 300 °C substrate temperature contributed to 74 to 79 % of optical transmittance in the 450 nm region. Results of this study suggested that a better performance of both optical transparency and electrical conductivity of ITO films can be achieved by operating at high temperature substrate and high level of sputtering power.

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