Role of remote interfacial phonons in the resistivity of graphene

Y G You,Y Kwon,B H Park,J H Ahn,E E B Campbell,S H Jhang

doi:10.1063/1.5097043

Y G You, Y Kwon + Show 4 more

Open Access

https://doi.org/10.1063/1.5097043

Copy DOI

Abstract

The temperature (T) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates: HfO2, SiO2, and h-BN. The resistivity of graphene shows a linear T-dependence at low T and becomes superlinear above a substrate-dependent transition temperature. The results are explained by remote interfacial phonon scattering by surface optical phonons at the substrates. The use of an appropriate substrate can lead to a significant improvement in the charge transport of graphene.

Highlights

The temperature (T ) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates; HfO2, SiO2 and h-BN
The results are explained by remote interfacial phonon scattering by surface optical phonons at the substrates
For HfO2 substrate with lower surface optical phonon energy of ∼21 meV, the resistivity arising from the surface optical phonon scattering was calculated to be ∼600 Ω at room temperature for a Fermi energy EF of 100 meV, much larger than ∼10 Ω calculated for an h-BN substrate[7]

Summary

Introduction

Citation for published version: You, YG, Ahn, JH, Park, B-H, Kwon, Y, Campbell, EEB & Jhang, S-H 2019, 'Role of remote interfacial phonons in the resistivity of graphene', Applied Physics Letters, vol 115, 043104. The temperature (T ) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates; HfO2, SiO2 and h-BN. I-Tan et al theoretically investigated the dependence of the surface optical phonon scattering in graphene on various substrates[7].

Results

Conclusion