Abstract
In the paper the numerical evaluations of the contribution of recombination processes—Auger recombination and nonradiative recombination in the dynamics of the heating of silicon during multipulse femtosecond laser irradiation in the regimes of microstructuring of the surface are presented to discussion. The original three-step quantitative-analytical method is used for the calculations. The comparison with other heat accumulation effects is made. It is shown, that Auger recombination decreases maximum surface temperature and does not contribute in the heat accumulation effect. At pulse energy density below the threshold, increase in the heating due to nonradiative recombination is 20–25 % of the total residual temperature at pulse repetition rate 10–1000 Hz.
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