Abstract
Using Monte Carlo simulations, we studied the effect of readsorption on the growth rate and morphology of AIIIBVnanowires. It is demonstrated that readsorption of arsenic leads to an increase in the growth rate and premature consumption of a seed drop. The reabsorption of metal atoms leads to a slowdown in the axial growth but prolongs the growth, since it prevents the droplet from disappearing after the length of the nanowire reaches the diffusion length of the metal atoms along the side walls of the wire. It is demonstrated that it is possible to increase the diffusion length of group III elements along the side walls of the nanowire using the pulsed growth mode.
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