Abstract
TiN coatings deposited by various physical vapor deposition (PVD) processes often exhibit certain preferred orientations, which are heavily affected by process parameters. This investigation thoroughly examines the preferred orientation of TiN film deposited by a hollow cathode discharge (HCD) ion plating system. The roles of process parameters in determining the preferred orientation of TiN films were studied. Process parameters such as bias voltage, deposition power and nitrogen pressure all affect the degree of ion bombardment during deposition. The strain accumulation or lattice damage in TiN film caused by ion bombardment determines the preferred TiN texture to be (111) or (220). These two phenomena, strain accumulation and lattice damage under ion bombardment, are more obvious at a low deposition temperature. Without ion bombardment, high temperatures mainly increase the energy of adatoms, enabling the thermodynamically favorable orientation (200) to be achieved.
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