Abstract
TiO2 thin films based resistive random-access memory was examined for resistive switching behavior. TiO2 thin films were deposited on FTO glass substrate using single step hydro-thermal method with different synthesis parameters. The x-ray Diffraction results confirmed the existence of both anatase and rutile phases (hybrid) in one film and only rutile phase in other film. Morphological studies of prepared TiO2 thin film were carried out using scanning electron microscope. The photo-luminescence results revealed the presence of Ti interstitial defects (Ti+4 & Ti+3) and oxygen vacancies in hybrid phase film. Whereas, Ti interstitial defects were absent in rutile phase film. Current voltage characteristics showed the presence of resistive switching in the hybrid phase film only. The switching characteristics have been attributed to originate from the presence of Ti interstitial defects, facilitating Ag+ ion migration in TiO2 dielectric layer. The observed resistive switching has been explained on the electrochemical metallization (ECM) model.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
