Abstract
Aluminum doped zinc oxide (ZAO) films were prepared by sol gel dip-coating process. Several annealing treatments were carried out to improve the conductivity of ZAO films. The results show that the annealing temperature and the cooling rate have significant effects on the resistivity of ZAO films. A minimum resistivity of 5.97×10−3Ωcm with the transmission in visible light region above 85% can be obtained after vacuum annealing. The desorption of oxygen that is chemisorbed on the surface and at the grain boundary is thought to be responsible for the observed improvement.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
