Abstract
GaAsN thin films were grown by chemical beam epitaxy using monomethylhydrazine ((CH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> )N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) as the N sources, and the role of the nitrogen (N) and impurities (hydrogen (H), carbon (C)) on free carrier concentration was investigated. The N, H, and C concentrations increased with decreasing growth temperature. GaAsN thin film grown at 470degC was n-type conduction, and the donor is thought to be the same in GaAs thin film. On the other hand, the films grown at 390~460degC were p-type conduction. In the range of 420~460degC, the hole concentration increased with decreasing growth temperature, and it decreased below 420degC, respectively. In order to clarify the origin of acceptor in p-GaAsN thin films, the dependence of growth temperature on the hole concentration and N, H, and C concentration were investigated, and the relationship between them was discussed
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