Role of masking oxide on the silicon surface on defect formation in SIMOX structures

Abstract

The properties of Si/SiO2 structures produced by oxygen implantation into silicon (SIMOX technology) are investigated by the high-frequency C-V method and by the electroluminescence (EL) method. The existence of electrically active and luminescence centers in the oxide layer near the interface is established. The effect of a SiO2 masking layer on the silicon surface on defect formation in the SIMOX structure is elucidated. The dependence of the concentration of the electrically active and luminescence centers on the thickness of the masking layer is found.