Abstract
Present study investigates the contribution of defects in the thermoelectric transport properties of Bi2Te3 thin films using 120 keV He+ and Ar+ ion irradiation. Charge carrier type is converted from n-type to p-type with He+ ion irradiation. Upon Ar+ ion irradiation, thin film exhibited p-type conductivity at lower ion fluence and n-type conductivity at higher ion fluences. In case of He+ ion irradiation, bismuth vacancies were suggested to increase hole density and responsible for p-type conductivity whereas in the case of Ar+ ion irradiation, Ar+ ion induce grain melting that suppresses defect density and consequently increases electron concentration. Bi2Te3 films irradiated with the He+ ion fluence of 1 × 1015ions/cm2 exhibited highest power factor value of ~6.3 μW/mK2 at room temperature.
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