Abstract
The role of the bottom interfacial layer (IL) in enabling stable complementary resistive switching (CRS) in the TiN/HfOx/IL/TiN resistive memory device is revealed. Stable CRS is obtained for the TiN/HfOx/IL/TiN device, where a bottom IL comprising Hf and Ti sub-oxides resulted from the oxidation of TiN during the initial stages of atomic-layer deposition of HfOx layer. In the TiN/HfOx/Pt device, where formation of the bottom IL is suppressed by the inert Pt metal, no CRS is observed. Oxygen-ion exchange between IL and the conductive path in HfOx layer is proposed to have caused the complementary bipolar switching behavior observed in the TiN/HfOx/IL/TiN device.
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