Abstract
Ballistic electron emission microscopy (BEEM) is a technique for the measurement of nanoscopic spatial variations in the barrier height of metal-semiconductor contacts. We have used BEEM in conjunction with simultaneous scanning tunneling microscopy observations of topography, as well as cross-sectional and plan-view transmission electron microscopy, to investigate diode nonidealities and relate them to microstructure. Au/ZnSe and PtSi/Si diodes were examined using these techniques. When analyzed with the parallel conduction model, distributions of barrier heights observed by BEEM in area scans agree well with values measured by conventional techniques and reported in the literature. The wider Au/ZnSe barrier height distribution is thought to be correlated with a rougher interface structure than the PtSi/Si.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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