Abstract
We proposed intentional hydrogen doping of polycrystalline ZnO thin films involves combining the photo‐assisted metalorganic chemical vapor deposition (Photo‐MOCVD) and Hg‐sensitized hydrogen addition methods. In this work, we investigated the role of hydrogen impurities in polycrystalline ZnO incorporated via two methods: i) post‐deposition hydrogen exposure, and ii) hydrogen addition during the deposition. From the room‐temperature infrared absorption spectra, low‐temperature photo luminescent spectra, and electrical stability measurements under air atmosphere, we concluded that substitutional complexes consisting of oxygen vacancies and hydrogen atoms, as well as interstitial hydrogen located between O‐Zn bonds act as shallow donors and decrease oxygen vacancies.
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