Abstract
Silicon nitride films were deposited by mercury-sensitized photochemical vapor deposition utilizing a gaseous mixture of Si 2H 6 (2% in Ar) and NH 3 under 253.7 nm ultraviolet light irradiation. Non-stoichiometric silicon-rich and nitrogen-rich samples were deposited by varying gas flow ratio. High partial pressure of disilane results in the formation of clusters, with the incorporation of hydrogen in the form of SiH and NH stretching modes below the detection level of Fourier transform infrared spectroscopy. In the nitrogen-rich sample the bonded hydrogen concentration is 0.56×10 18 cm −2. After annealing the samples at 350 °C for 3 h in a pressure of 50 mTorr, the interface electronic state density decreases for silicon-rich sample and increases for nitrogen-rich sample.
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