Role of implantation temperature on residual damagein ion-implanted 6H-SiC

Abstract

The optical and structural properties of ion-implanted 6H-SiC singlecrystals were investigated for samples implanted with 370 keV 28Si ionsto doses ranging from 5×1013 to 1×1016 cm-2 and atirradiation temperatures ranging from 20 to 600 °C. Rutherfordbackscattering spectrometry channelling (RBS/C) showed that the dynamicrecovery of the induced-damage layer increases with irradiation temperature.The final disorder determined from RBS/C as a function of implantationtemperature was modelled in terms of a thermally activated process whichyielded an activation energy of 0.08 eV. Defect distributions are found toshift to greater depths with increasing implantation temperature and dose.Some defects are even found farther than the accessible range of the implantedions. RBS/C data on high-temperature implantations also suggests that defectcomplexes are created at high doses in addition to the point defects that arestill stable at high temperature. A decrease in Raman intensity of implantedsamples relative to that of crystalline samples was observed and correlatedwith an increase in optical absorption near the wavelength of the laser pump(514.5 nm).