Abstract
Plasma treatment of HfO2 films by octafluorocyclobutane (C4F8) 60 MHz(HF)/2 MHz(LF) dual-frequency capacitively coupled plasmas (DF-CCPs) was investigated. It is found that the fluorine atoms were incorporated into the HfO2 films by C4F8 DF-CCP treatment, but the C : F films were formed on the surface of the HfO2/Si gate stacks. The results also show that both the plasma treatment and the process of post-deposition annealing play major roles in stabilizing the tetragonal structure, leading to a large band gap and good electrical properties. The formation of t-HfO2 is related to oxygen vacancy generation and Si diffusion into the HfO2 films. The capacitance–voltage measurement showed that the smallest ΔVfb and the lowest interface trap density were obtained at the HF power of 120 W and the LF power of 30 W. Therefore, the C4F8 DF-CCP is a suitable method to improve the electrical characteristics of HfO2/Si gate stacks.
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