Abstract
AlCrN layers were grown by gas source molecular beam epitaxy with varying amounts of Cr (up to ∼3at.%) under a broad range of Cr cell temperatures and V/III ratio. Magnetic measurements performed in a superconducting quantum interference device magnetometer showed evidence of ferromagnetism up to 350K in single phase material. Magnetization dependence on dopant cell temperature and V/III was used to optimize the growth conditions of the AlCrN layers. The single-phase material was highly insulating (∼1010Ωcm), while the material containing second phases (predominantly Cr2N and AlxCry) was conducting with resistivity of order 1000Ωcm. High resolution x-ray diffraction rocking curves indicated high crystalline quality in the single phase material.
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