Abstract
Influence of the electrical potential fluctuations on quantum transfer effects in semiconductor heterostructures is analyzed. It is shown that, contrary to the bulk 3D case, carriers capture by a quantum well or tunneling through a potential barrier is not characterized by optimal fluctuation. Spin-dependent tunneling in single-barrier nonmagnetic structures is shown to be insensitive to the fluctuations while in double-barrier structures fluctuations substantially reduce achievable spin polarization of the carriers. It is demonstrated that while for realistic AlGaAs heterostructures carriers capture by a quantum well keeps its resonance behavior, for presently actual InGaN-based heterostructures the capture probability becomes a smooth function of the quantum well parameters.
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