Abstract
We incorporate the role of excess carrier generation and recombination phenomena in nanostructured material and develop an approach to obtain V-I characteristic for a memristor. The V-I characteristic curve for the memristor is pinched hysteresis loop which is an important signature of memristor. This analysis suggests that our approach may be an alternate viable in realising the underlying theory behind memristivity as an inherent property of nanostructured materials.
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