Abstract
Detailed experimental and theoretical studies of the temperature dependence of the effect of different scattering mechanisms on electrical transport properties of graphene devices are presented. We find that for high mobility devices the transport properties are mainly governed by completely screened short range impurity scattering. On the other hand, for the low mobility devices transport properties are determined by both types of scattering potentials - long range due to ionized impurities and short range due to completely screened charged impurities. The results could be explained in the framework of Boltzmann transport equations involving the two independent scattering mechanisms.
Highlights
SiO2 Si phonon and an unexpected non-linear density dependence of dρ/dT
We have studied in detail the temperature dependence of the resistivity of SLG devices on SiO2 substrate to understand the temperature and gate voltage (Vg) dependencies of the scattering mechanism
The temperature dependence of the electrical transport of these SLG devices could be explained within a Boltzmann transport formalism involving two independent scattering mechanisms - (i) long range Coulomb scattering and (ii) short range delta potential
Summary
SiO2 Si phonon and an unexpected non-linear density dependence of dρ/dT. It is presumed that this is because of screened Coulomb scattering at low carrier densities. A peculiar consequence of the linear dispersion relation of SLG is that the resistivity due to acoustic phonon scattering was predicted to be independent of the carrier number density[8,9]. This was found to be experimentally valid[10] in the temperature range below 200 K for ultra-clean SLG devices on SiO2 substrates. Over this temperature range dρ/dT was independent of number density (gate voltage) and ρ varied linearly with temperature. Despite intensive research over the last decade the relevant scattering mechanisms which determines the transport properties have not been unambiguously identified
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