Abstract
Various types of conductive tips in atomic force microscope (AFM) are used to localize field-enhanced metal-induced solid phase crystallization (FE-MISPC) of amorphous silicon at room temperature down to nanoscale dimensions. The process is driven by electrical currents ranging from 0.1 nA to 3 nA between the tip and the bottom nickel electrode. The amplitude of the current is controlled by a metal-oxide-semiconductor field-effect transistor-based regulation circuit using proportional and derivative feedback loops. We analyze the results of the FE-MISPC process as a function of exposition current profiles, topographic changes, local conductivity changes (using current-sensing AFM) and regulation parameters. We found out that the FE-MISPC crystallization requires fluctuations of the exposition current rather than its stability. This is independent of the actual current set-point level. We also show the influence of the process on the AFM probes employed and vice versa. Bulk diamond probes exhibit superior endurance compared to bare or coated silicon probes, nevertheless all tips produce similar FE-MISPC results.
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