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Abstract
Ion layer gas reaction (ILGAR) method allows for deposition of Cl-containing and Cl-free In2S3 layers from InCl3 and In(OCCH3CHOCCH3)3 precursor salts, respectively. A comparative study was performed to investigate the role of Cl on the diffusion of Cu from CuSCN source layer into ILGAR deposited In2S3 layers. The Cl concentration was varied between 7 and 14 at.% by varying deposition parameters. The activation energies and exponential pre-factors for Cu diffusion in Cl-containing samples were between 0.70 to 0.78 eV and between 6.0 × 10−6 and 3.2 × 10−5 cm2/s. The activation energy in Cl-free ILGAR In2S3 layers was about three times less compared to the Cl-containing In2S3, and the pre-exponential constant six orders of magnitude lower. These values were comparable to those obtained from thermally evaporated In2S3 layers. The residual Cl-occupies S sites in the In2S3 structure leading to non-stoichiometry and hence different diffusion mechanism for Cu compared to stoichiometric Cl-free layers.
Highlights
In2S3 has found increased attention in photovoltaic’s as a replacement for toxic CdS [1,2,3,4] because of its suitable properties
Diffusion of Cu from Cu(In,Ga)(S,Se)2 absorber [3,10,11] or CuSCN hole conductor [12] into In2S3 layers has been a major drawback to effective performance and stability of these solar cells
Higher conversion efficiency was achieved for Cl-free In2S3 layers compared to Cl-containing layers both prepared by Ion layer gas reaction (ILGAR) [26]
Summary
In2S3 has found increased attention in photovoltaic’s as a replacement for toxic CdS [1,2,3,4] because of its suitable properties. In2S3 layers can be deposited from InCl3 or In(OCCH3CHOCCH3) to obtain Cl-free and Cl-containing layers [26]. The presence of Cl in In2S3 increased the optical band up to 2.4 eV compared to 2.0 eV for Cl-free layers. Higher conversion efficiency was achieved for Cl-free In2S3 layers compared to Cl-containing layers both prepared by ILGAR [26]. It is important to investigate the effect of Cl on diffusion of Cu in ILGAR deposited In2S3 layers. Activation energy and diffusion prefactor of 0.3 eV and 9 × 10−11 cm2·s−1 determined from RBS depth profiling have been reported for Cu diffusion in thermally evaporated In2S3 layers [23]. We report a comparative study of Cu diffusion in Cl-free and Cl-containing In2S3 layers. The distribution of diffused Cu in In2S3 was profiled by RBS from which the diffusion coefficients were determined as a function of annealing temperature
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