Abstract
In the present work, one-dimensional nanostructures of silicon oxide (SiOx) have been synthesized by thermal annealing method with and without chromium thin film on silicon substrate. The synthesis was carried out at different process temperatures ranging from 1000°C to 1100°C by using gold/chromium (Au/Cr) catalysts stack layer on the Si substrate in nitrogen (N2) ambience. The as-synthesized SiOx nanostructures have tetragonal rutile structure and show polycrystalline nature. The SEM images reveal wire-like nanostructures on the substrate with and without chromium thin film. Under the catalytic reaction of the gold/chromium metal, the density of SiOx nanowires is enhanced, since the Cr layer serves as a diffusion barrier for the diffusion of the gold downwards into the Si substrate. The vapor-liquid solid (VLS) growth mechanism is found to be dominant in the growth of SiOx nanowires. Furthermore, X-Ray diffraction microscopy (XRD) and Photoluminescence spectroscopy (PL) analysis conclude the defect free growth of the SiOx nanowires on gold/chrome/silicon substrate.
Highlights
Amorphous silicon oxide (SiOx) nanowires have many potential applications in blue light emitters, optical sensors [1] and reinforcing composites [2]
During the growth of SiOx nanowires, the diffusion of the gold into the Si substrate is retarded by inserting a thin layer of chromium (Cr) metal in the al used gold (Au)/Si substrate
The as-synthesized products were analyzed with Scanning Electron Microscopy (SEM), X-Ray diffraction microscopy (XRD), Energy Dispersive X-ray Spectroscopy (EDX), Transmission Electron Microscopy (TEM) and Photoluminescence spectroscopy (PL) for observing the effect of chromium thin film on the structural morphology, crystal structure, composition and optical properties of silicon oxide (SiOx) nanostructures
Summary
Amorphous silicon oxide (SiOx) nanowires have many potential applications in blue light emitters, optical sensors [1] and reinforcing composites [2]. These nanowires are generally grown with transition metal catalysts. Park et al used gold (Au) and palladium-gold (Pd-Au) thin film as the catalyst for the growth of amorphous SiOx nanowires. A thin layer of the gold on the Si substrate is heated at growth of the high temperature (~1100 ̊C) in the presence of inert gas environment. During the growth of SiOx nanowires, the diffusion of the gold into the Si substrate is retarded by inserting a thin layer of chromium (Cr) metal in the Au/Si substrate. The as-synthesized products were analyzed with Scanning Electron Microscopy (SEM), X-Ray diffraction microscopy (XRD), Energy Dispersive X-ray Spectroscopy (EDX), Transmission Electron Microscopy (TEM) and Photoluminescence spectroscopy (PL) for observing the effect of chromium thin film on the structural morphology, crystal structure, composition and optical properties of silicon oxide (SiOx) nanostructures
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
