Role of Charge Traps in the Performance of Atomically Thin Transistors.

Iddo Amit,Francesco Reale,Tobias J Octon,Monica F Craciun,Nicola J Townsend,C David Wright,Saverio Russo,Cecilia Mattevi

doi:10.1002/adma.201605598

Iddo Amit, Francesco Reale + Show 6 more

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https://doi.org/10.1002/adma.201605598

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Abstract

Transient currents in atomically thin MoTe2 field-effect transistors (FETs) are measured during cycles of pulses through the gate electrode. The curves of the transient currents are analyzed in light of a newly proposed model for charge-trapping dynamics that renders a time-dependent change in the threshold voltage as the dominant effect on the channel hysteretic behavior over emission currents from the charge traps. The proposed model is expected to be instrumental in understanding the fundamental physics that governs the performance of atomically thin FETs and is applicable to the entire class of atomically thin-based devices. Hence, the model is vital to the intelligent design of fast and highly efficient optoelectronic devices.

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The curves of the transient currents are analyzed in light of a newly proposed model for charge-trapping dynamics that renders a time-dependent change in the threshold voltage as the dominant effect on the channel hysteretic behavior been implemented in a wide range of applications, ranging from thin film transistors,[9] digital electronics and optoelectronics,[2,10,11] flexible electronics,[12]
Using μp =L(dIds/dVgs)/(WCoxVds) in the linear regime of the curve, where L = 1 μm and W = 3 μm are the device length and width, respectively, and Cox = ε0εr/d = 115 μF m−2 is the gate dielectric capacitance, with ε0 the vacuum permittivity, and εr the oxide relative permittivity, we find that the mobility is between 0.12 on the forward sweep and 0.14 cm2 V−1 s−1 on the back sweep

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The full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:. Citation for published item: Amit, Iddo and Octon, Tobias J. and Townsend, Nicola J. and Reale, Francesco and Wright, C David and Mattevi, Cecilia and Craciun, Monica F. and Russo, Saverio (2017) 'Role of charge traps in the performance of atomically thin transistors.', Advanced materials., 29 (19).

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