Role of cation-mediated recombination on the hysteresis behavior of perovskite light-emitting diodes

Abstract

Despite the significant advancement in the efficiency of perovskite light emitting diodes (PeLEDs), the issue of recombination-induced hysteresis during the ions migration has not been adequately addressed. This hysteresis behavior primarily arises from the slow redistribution of ions and their corresponding vacancies during the voltage sweeps. Here, our focus is on the trapping characteristics of ionic defects, which leads to the non-radiative recombination of charge carriers. We investigate the impact of various parameters, such as trapping cation energy, capturing coefficient, ion mobility, and scan rate on the hysteresis behavior observed in the J-V characteristics of device. Moreover, our results provide a framework for examining the relationship between mobile ions and charge carrier, implying that for better understanding of ions migration-induced field screening and carrier redistribution, it is crucial to consider the interplay of ions with charge carriers as a potential factor contributing to J-V hysteresis in the modeling of PeLEDs.