Abstract
The enhancement of the critical current density (Jc(H)) of carbon and nano-SiC doped MgB2 is presented and compared. The upper critical field (Hc2) being determined from resistivity under magnetic field experiments is though improved for both C substitution and nano-SiC addition the same is more pronounced for the former. In MgB2−xCx carbon is substituted for boron that induces disorder in the boron network and acts as internal pinning centres. The optimal Jc(H) values are obtained for x=0.1 sample. In case of nano-SiC doped in MgB2, the Jc(H) improves more profoundly and two simultaneous mechanisms seems responsible to this enhancement. Highly reactive nano-SiC releases free carbon atom, which gets easily incorporated into the MgB2 lattice to act as intrinsic pinning centres. Further enhancement is observed for higher nano-SiC concentrations, where the un-reacted components serve as additional extrinsic pinning centres.
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