Abstract
Abstract The influence of systematic variation of hydrogen dilution and rf power density and their inter correlation on the optoelectronic and structural properties as well as defect densities of amorphous silicon germanium (a-SiGe:H) alloy deposited in ultra high vacuum (≈10 −9 Torr) plasma enhanced chemical vapor deposition (PECVD) system have been investigated. It has been observed that low hydrogen dilution of source gases (silane and germane) during the growth of films improves the resulting properties whereas high dilution has the opposite effect. The optimal value of hydrogen dilution for relaxed network structure of a-SiGe:H alloy is very much linked with rf power density. The variation of film properties with plasma condition during its growth nicely corroborate Street's hypothesis on optimal growth condition for amorphous silicon and its alloys, based on hydrogen density of states (HDOS). This work also indicates that metastable hydrogen (H ∗ ) has a vital role to transport energy to the matrix for its requisite structural relaxation apart from its chemical activity.
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