Abstract
The role of argon gas concentration on silicon nitride layer formation by using Pulsed dc glow discharge is investigated by exposing Si (100) to different N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Ar plasma for 4 hrs at 2 mbar pressure and 175 W power. XRD results show the development of different planes of silicon nitride which confirms the formation of silicon nitride films. The peak broadening, overlapping and shifting from their stress free values are attributed to the argon nitrogen plasma concentrations. SEM results show the formation of nitride film. AFM images shows that silicon nitride films are rough in nature and their roughness is increased with argon. Maximum surface roughness is observed for 20% argon while minimum surface roughness is observed at 10% argon content in nitrogen-argon plasma.
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