Abstract

The effect of the crystal structure of silicon LPCVD thin films on the initial residue stress and changes under post deposition treatment was investigated. It is shown that initial residue stress as-deposited films are under compression regardless of the crystal structure. Sharp change of the residue stress from compressive to tensile is a result of post annealing of amorphous silicon films at temperature above 650°C. Two temperature ranges of post annealing with minimal or free residual stress for amorphous silicon films were observed. The initial residual stress of polysilicon films is strongly depending on deposition condition as well as composition and concentration of gas environment. The post annealing time has a weak effect on the change of residual stress. Noticeable time effects were observed only for amorphous films at a temperature about 600°C.

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