Abstract
We focus on the role of spacer alloy decomposition in the vertical correlation for a bilayer of strained InAs quantum wires, where the spacer layer is an immiscible alloy. We show how the surface morphology combined with the strongly inhomogeneous strain distribution favors a V-shaped partial demixing of the spacer layer. We also demonstrate that this decomposition has tangible consequences on the vertical organization when depositing a second wire layer. Different configurations can be obtained from perfect top-on-top, to perfect vertical anticorrelation, via all kinds of oblique correlation.
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