Abstract

In this paper, the effect of Alcohol Ethoxylate (AEO-9) in barrier slurry for chemical mechanical planarization(CMP) of copper interconnection was studied. The results showed that the surface roughness of copper can be reduced by AEO-9. The TEOS(tetraethylorthosilicate) removal rate(RR) decreased with the increase of AEO-9 concentration, and the removal rate of copper was essentially unchanged. The influence mechanism of AEO-9 on surface roughness was tested and analyzed with atomic force microscopy (AFM), surface tensiometer tester, large particle counts (LPC) and contact angle tester.

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