Rogue waves lead to the instability in GaN semiconductors.

M E Yahia,N A El-Bedwehy,W M Moslem,R E Tolba,S K El-Labany

doi:10.1038/srep12245

Abstract

A new approach to understand the electron/hole interfaced plasma in GaN high electron mobility transistors (HEMTs). A quantum hydrodynamic model is constructed to include electrons/holes degenerate pressure, Bohm potential, and the exchange/correlation effect and then reduced to the nonlinear Schrödinger equation (NLSE). Numerical analysis of the latter predicts the rough (in)stability domains, which allow for the rogue waves to occur. Our results might give physical solution rather than the engineering one to the intrinsic problems in these high frequency/power transistors.

Highlights

A new approach to understand the electron/hole interfaced plasma in GaN high electron mobility transistors (HEMTs)
GaN High Electron Mobility Transistors (HEMTs) is one of the most important examples application of GaN, which is characterized by very low noise figure because of the nature of the two dimensional electron gas 2DEG and the fact that there are less electron collisions
Many researchers overwhelmingly combine on the location of the GaN HEMT traps, but the strange thing is that, they always give fuzzy reasons basically depend on random localization distribution of causes like impurities, lattice defect, and dislocations

Summary

OPEN Rogue waves lead to the instability in GaN semiconductors

A quantum hydrodynamic model is constructed to include electrons/holes degenerate pressure, Bohm potential, and the exchange/correlation effect and reduced to the nonlinear Schrödinger equation (NLSE) Numerical analysis of the latter predicts the rough (in)stability domains, which allow for the rogue waves to occur. Recent research shed the light on many anomalous phenomena that have been observed in a variety of systems, ranging from discrete lattices[7,8], fluids[9,10], plasmas[11], ultracold quantum gases[12,13], optics[14,15,16,17], lasers[18,19,20], optical fibers[21,22,23] Their similar characteristics that are governed by the nonlinear Schrödinger equation (NLSE) solutions could be considered as the clue to understand their nature. The nonlinear dynamics of such disturbances is governed by the normalized fluid equations for electrons

The system is closed by the Poisson equation

Additional Information