Abstract
AbstractThe cross-sectional transmission electron microscopy (TEM) specimens of Pt/Ti/SiO2/Si, RuO2/SiO2/Si, W/TiN/SiO2/Si, (Pb,La)TiO3/Pt/MgO, Bi4Ti3O12/Lal-xCaxMnO3/MgO, and GaN/Al2O3 were successfully made by the rocking-angle ion-milling technique. The differential thinning problems could be effectively mitigated when the rocking-angle and the ion-beam incidence angle were optimized for each heterostructure. It was found that the sputtering yield ratio between the layer milled most quickly and the layer milled most slowly is one of the important factors which determine the optimum rocking-angle ion-milling condition. The atomic force microscopy study on the surface topography of the cross-sectional Pt/Ti/SiO2/Si TEM sample after ion-milling provided quantitative information about the effects of the rocking-angle variation. A parameter which is the ratio between the layer with a minimum electron transparency and the layer with a maximum electron transparency was suggested.
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