Robustness study of a fast protection method based on the gate-charge dedicated for SiC MOSFETs power device

Abstract

This paper focuses on the extensive robustness validation of a gate charge detection method designed for SiC MOSFETs under short-circuit operation, and, in terms of failure-modes. The benefits of having a fast (sub-microsecond – 150 ns) detection method is illustrated by a 1D thermo-metallurgical simulation. This method is integrated owing to an optimized SMD/PCB technology (Surface-Mount Device/Printed Circuit Board).