Abstract
Recent material technological advances for silicon carbide (SiC) have led to a wide selection of commercial SiC power transistors, especially MOSFETs, from various manufacturers and hence it is vital to have these devices thoroughly characterized under different test conditions representative of power electronics applications. This paper aims to present an experimental characterization under negative temperature of commercially available SiC Power MOSFETs in order to assess their robustness. Devices were tested during short circuit (SC) and unclamped inductive switching (UIS) conditions.
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