Abstract
To achieve photoelectric appliance, effective carrier separation is a vital question. Here, we construct van der Waals (vdW) heterostructure by superimposing two different two-dimensional (2D) layer materials BP and AlN via vdW force. The results show that 2D BP/AlN heterostructure exhibits direct band gap characteristics and has a type-II band alignment, which accelerates the effective separation of electron-hole pairs. In addition, under the modulation of applied external electric field and biaxial strain, this heterostructure still keeps a type-II band alignment. This result reveals that 2D BP/AlN heterostructure shows a wide application prospect in the future photoelectric nanodevices.
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