Abstract
Electronic structures and topological properties of silicene adsorbed with 5d transition metal atom Ta (silicene-Ta) are investigated by using the first-principles calculations. The Ta atom prefers to adsorb at the hollow site of silicene. We demonstrate that the quantum anomalous Hall (QAH) effect can be realized in the studied silicene-Ta system, whose Fermi level is found to be located exactly inside the spin-orbit coupling induced nontrivial bulk band gap. In addition, the heterostructure of silicene-Ta/BN is built and explored. By applying an external vertical electric field, the realized topologically nontrivial bulk band gap can be enlarged effectively. Our calculations show that the achieved QAH effect is robust against the Ta adatom adsorption coverage (∼1%–6%) and disorder, making the experimental observation highly flexible. Our findings will greatly promote the experimental realization and practical application of the QAH effect in silicene-based systems.
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