Abstract

Estimation of the junction temperature Tj is key for protection, diagnostics and prognostics of power IGBT modules. Requirements are low-cost, low calibration effort, low intrusiveness, high accuracy, and high robustness. The objective of this paper is to present an on-line Tj estimation method using low load-current pulses for IGBTs and diodes based on the on-state voltage Von as a Temperature Sensitive Electrical Parameter (TSEP). It associates for the first time a calibration, a model, a pulse generation, a measurement and a robustness tuning to generate an estimation with highest performances.The implemented auto-calibration procedure relies on a reduced set of 3-dimensional data. The temperature estimation method is validated on a PWM switching converter, whereby the interruption of the nominal process is shorter than 100us. The estimations are compared to the measurements taken with infrared camera, with error smaller than ±3°C. In addition, a simple analytical on-line method is proposed to correct the errors caused by successive wire-bond lift-off, attributable to the natural ageing of the module, and maintain it within less than ±2°C.The on-line, accurate, robust and practical implementation of Von as a TSEP, as demonstrated in this paper, is intended for condition monitoring of power semiconductor modules in power cycling and field applications.

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