Abstract
Metal halide perovskites have attracted considerable attention for use in flexible resistive random access memory (RRAM), due to their good photoelectric regulation, high ON/OFF ratios, and low fabrication costs. Flexible conductive substrates play a crucial role in improving RRAM device performance. Herein, mica/silver nanowires welded with aluminum-doped zinc oxide (mica/AgNWs@AZO) substrates with high-temperature resistance, high flexibility, high conductivity, and good stability have been successfully fabricated. The average sheet resistance 3.5 Ω sq−1 of the conductive mica substrate is 68% lower than that of a commercial PET/ITO, and it remains stable below 13.1 Ω sq−1 under 200 °C. The maximum conductivity of the mica/AgNWs@AZO substrate can reach 58 S/m after 64 h of tensile stress bending at a radius of 20 mm. Perovskite CsPbBr3 nanocrystal (NC) RRAM is constructed on the mica/AgNWs@AZO substrate. The ON/OFF ratio 103 of the device in light is 102 times higher than that in dark under 5000 bending cycles. Flexible perovskite RRAM is a promising candidate for next-generation-logic, adaptive, non-volatile memory devices.
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