Abstract

We demonstrate the creation of robust localized zero-energy states that are induced into topologically trivial systems by insertion of a PT-symmetric defect with local gain and loss. A pair of robust localized states induced by the defect turns into zero-energy modes when the gain-loss contrast exceeds a threshold, at which the defect states encounter an exceptional point. Our approach can be used to obtain robust lasing or perfectly absorbing modes in any part of the system.

Highlights

  • Rapid CommunicationsMaganã-Loaiza, Henning Schomerus ,4 and Hamidreza Ramezani 1,* 1Department of Physics and Astronomy, University of Texas Rio Grande Valley, Brownsville, Texas 78520, USA 2Department of Physics, Eskisehir Technical University, Eskisehir, Turkey

  • A range of studies have identified non-Hermitian degeneracies known as exceptional points (EPs) as a mechanism to create robust defect states, even when starting from systems that are trivial in their Hermitian limit [37,38,39,40]

  • Most studies of this phenomenon still utilized systems that either already possessed topological states in the Hermitian limit [17,18,34,41,42,43,44,45], or altered the coupling configuration in some suitable way [37,38,39,40,46,47]. In this Rapid Communication, we demonstrate that a PT symmetric defect embedded into the topologically trivial phase of a Hermitian system is sufficient to create localized symmetry-protected defect states

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Summary

Rapid Communications

Maganã-Loaiza, Henning Schomerus ,4 and Hamidreza Ramezani 1,* 1Department of Physics and Astronomy, University of Texas Rio Grande Valley, Brownsville, Texas 78520, USA 2Department of Physics, Eskisehir Technical University, Eskisehir, Turkey. We demonstrate the creation of robust localized zero-energy states that are induced into topologically trivial systems by the insertion of a PT -symmetric defect with local gain and loss. A pair of robust localized states induced by the defect turns into zero-energy modes when the gain-loss contrast exceeds a threshold, at which the defect states encounter an exceptional point. Our approach can be used to obtain robust lasing or perfectly absorbing modes in any part of the system

Introduction
Published by the American Physical Society
Conclusions

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