Abstract
Despite significant progress in the fabrication and application of semiconductor materials for optical emitters and sensors, few materials can cover the cyan-gap between 450 and 500 nm. We here introduce a robust and facile method to deposit amorphous Sb2S3 films with a bandgap of 2.8 eV. By exploiting the tunable functionality of graphene, a two-dimensional material, efficient deposition from a chemical was achieved. Ozone-generated defects in the graphene were shown to be required to enhance the morphology and quality of the material and comprehensive characterization of the seed layer and the Sb2S3 film were applied to design an optimal deposition process. The resulting material exhibits efficient carrier transport and high photodetector performance as evidenced by unprecedented responsivity and detectivity in semiconductor/graphene/glass vertical heterostructures. (112 A/W, 2.01 × 1012 Jones, respectively).
Highlights
Solid-state light emitters have improved the efficiency, availability, and comfort of lighting in our daily lives
It can be seen that the surface morphology of graphene before and after UV irradiation is not much different in Figs. 1a and 1b, and the boundary defects of graphene are not increased, resulting in no significant decrease in the transmittance
At a wavelength of 550 nm, the light transmittance is about 97.2% which is close to the single-layer graphene in the literature as shown in Fig. 1c, and surface oxidation of graphene does not affect the light transmittance of graphene after UV irradiation
Summary
Solid-state light emitters have improved the efficiency, availability, and comfort of lighting in our daily lives. To fulfill the missing cyan emission component in the PL spectrum, it is urgent to find a semiconductor material with the bandgap at 2.8 eV that can fill the cyan gap presents in the high-quality white light. Semiconductors mentions above have the necessary bandgap at 2.8 eV, but none of them have a good absorption coefficient in the cyan gap. We here demonstrate the robust deposition of amorphous Sb2S3 from a chemical bath by utilizing functionalized graphene as a substrate. To increase the efficiency of deposition, UV ozone irradiation is utilized to functionalize the surface of graphene. The presented robust and scalable deposition of S b2S3 on graphene (SSG) opens up new routes for large bandgap optoelectronic devices in light emission and solar cells
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