Robust ferromagnetism of (Co, Er) co-implanted ZnO-based diluted magnetic semiconductor

Abstract

The present study reports room temperature ferromagnetism observed in Co implanted, Er implanted and (Co, Er) co-implanted ZnO films deposited by filtered cathode vacuum arc (FCVA) on sapphire substrates. The microstructures, surface morphologies, electrical and magnetic properties of pure and implanted ZnO films were investigated. X-ray diffraction results confirm that the implantation of Co and Er ions cause the substitution of Zn ions without the formation of secondary phases. The results of X-ray photoelectron spectroscopy indicate that the Er ions and Co ions are in trivalent and divalent states, respectively. After ions implantation, the electrical properties of the films are improved and the carrier concentration of Er implanted ZnO film is higher than that of Co implanted ZnO film. Substantial intrinsic ferromagnetism has been observed for all the implanted ZnO films. The saturation magnetization for the Er implanted ZnO film is higher than that of the Co implanted ZnO film and the magnetization is further enhanced by (Co, Er) co-implanting. The carrier mediated exchange mechanism can well describe the origin of ferromagnetism in the doped ZnO films. Our results can provide a reference for preparing high-quality diluted magnetic semiconductors (DMSs) by RE elements and TM elements co-doping in ZnO films. The saturation magnetization for the Er implanted ZnO film is higher than that of the Co implanted ZnO film and the magnetization is further enhanced by (Co, Er) co-implanting. • A filtered cathode vacuum arc (FCVA) deposition system was used to grow ZnO films on sapphire substrates. • The saturation magnetization for the Er implanted ZnO film is higher than that of Co implanted ZnO. • The magnetization is enhanced by Co-Er co-doping compared with Co doped and Er doped film. • The magnetization shows carrier concentration-dependent behavior.